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Magazine Name : Ieee Transactions On Electron Devices

Year : 1998 Volume number : 45 Issue: 10

Generator Of Ultrashort Optical Pulses For Time Divison Multiplexing (Article)
Subject: Distributed Feedback Lasers , Electrooptic , Integrated Optoelectronics , Monolithic Integration
Author: Jaume Dellunde      M. C. Torrent      Joaquin Sancho-Bru     
page:      2122 - 2130
High Efficiency Polycrystalline Silicon Solar Cells Using Low Temperature Pecvd Process (Article)
Subject: Gettering , High Efficiency , Passivation
Author: Hussam Eldin A. Elgamel     
page:      2131 - 2138
A Comparative Analysis Of The Dynamic Behavior Of Btg/Soi Mosfet'S And Circuits With Distriuted Body Resistance (Article)
Subject: Comparative Study , Circuit , Distributed
Author: Glenn O. Workman      Jerry G. Fossum     
page:      2138 - 2145
A Thorough Investigation Of The Degradation Induced By Hot-Carrier Injection In Deep Submicron N-And P-Channel Partially And Fully Depleted (Article)
Subject: Device Lifetime , Hot-Carrier Effect , Soi Mosfet
Author: Shing-Hwa Renn      Christing Raynaud      Francis Balestra     
page:      2146 - 2152
Self-Aligned Control Of Threshold Voltages In Sub-0.2- Mosfet'S (Article)
Subject: Ion Implantation , Mosfets , Semiconductor Devices , Simulation
Author: Hajime Kurata      Toshihiro Sugii     
page:      2161 - 2166
A Compact Pre-And Post-Stress I-V Model For Submicrometer Buried-Channel Pmosfet'S (Article)
Subject: Bc Mosfet'S , Bidirectional Model , Hot-Carrier-Induced Degradation
Author: Chwan-Gwo Chyau      Sheng-Lyang Jang     
page:      2167 - 2178
Improvement Of The Reliability Of Amorphous Silicon Transistors By Conduction-Band Tail Width Reduction (Article)
Subject: Amorphous Silicon , Amorphous Sitability , Energy Band Tails
Author: Serag M. Gadelrab      Savvas G. Chamberlain     
page:      2179 - 2186
A Unified Equilibrium Treatment Of Modulation Doped Heterojunctions And Grossly Asymmetric Homojunctions And Its Application To Modfet Design (Article)
Subject: Analytical Model , Asymmetric Homojunction , Space-Charge Layer
Author: Shreepad Karmalkar     
page:      2187 - 2195
Negative Capacitance Effect In Semiconductor Devices (Article)
Subject: Capacitance , Semiconductor Devices
Author: Maxim Ershov      M. Buchanan      Andrew K. Jonscher     
page:      2196 - 2206
Noise Modeling In Mesfet And Hemt Mixers Using A Uniform Noisy Line Model (Article)
Subject: Conversion Matrix , Fet Mixer , Nonlinear Device
Author: Francois Danneville      Gilles Dambrine      Alain Cappy     
page:      2207 - 2212
Quantum Effects Upon Drain Current In A Biased Mosfet (Article)
Subject: Quantum Effect , Drain Current , Mosfet
Author: Brian K. Ip      John R. Brews     
page:      2213 - 2221
Electrothermal Simulations In Punchthrough And Nonpunchthrough Igbt'S (Article)
Subject: Electrothermal Simulation , Igbt , Pt , Short Circuit
Author: S Pendharkar      M Trivedi      K Shenai     
page:      2222 - 2231
Effect Of Diamond-Like Carbon Coating On The Emission Characteristics Of Molybdenum Field Emitter Arrays (Article)
Subject: Emission Current , Emission Stability , Hydrogen-Free Dlc
Author: Jae Ho Jung      Byeong Kwon Ju      Hoon Kim     
page:      2232 - 2237
A Physical Simulation Model For Field Emission Triode (Article)
Subject: Field Effect Transistor , Fowler , Simulation Model
Author: Chih-Wen Lu      Chung Len Lee     
page:      2238 - 2244
An Analytical Grain-Barrier Height Model And Its Characterization For Intrinsic Poly-Si Thin-Film Transistor (Article)
Subject: Cb States , Grain-Barrier Height , Grain Size , Intrinsic
Author: Hsin-Li Chen      Chung-Yuan Wu     
page:      2245 - 2246
Tunnelling Transport In Al-N-Gasb Schottky Diodes (Article)
Subject: Gallium Antimonide , Interface Modification , Schottky-Diode
Author: A. Subekti      T. L. Tansley      E. M. Goldys     
page:      2247 - 2248
A Model For The Drain Current Of Deep Submicrometer Mosfet'S Including Electron-Velocity Overshoot (Article)
Subject: Mos Devices , Semiconductor Devices
Author: J B Roldan      F Gamiz      J. E. Carceller     
page:      2249 - 2250
Lateral Igbt In Thin Sol For High Voltage, High Speed Power Ic (Article)
Subject: Breakdown Voltage , Lateral Device , Voltage Drops
Author: Ying-Keung Leung      Amit K. Paul      S Simon Wong     
page:      2251 - 2254
A Hierarchical Reliability Analysis For Circuit Design Evaluation (Article)
Subject: Electromigration , Integrated Circuit , Integrated Circuit Reliability
Author: S. P. Riege      C. V. Thompson      J. J. Clement     
page:      2254 - 2257